ELECTRON BEAM LITHOGRAPHY MODULE (XENOS XP G2) can be attached to a conventional scanning electron microscope (in our case: SCANNING ELECTRON MICROSCOPE SEM JEOL JSM 6390) in order to extend its capabilities to perform advanced micro-and nanolithography on semiconductors or other materials. The XENOS XPG2 consists of a fast pattern generator in order to produce the deflection signal data for the patterns which are then written by the SEM, e-beam or FIB system, implementing writing schemes and shape primitives so as to take full benefit of limited deflection chain bandwidths. The system is supplied with user-friendly and application-based ECP design and control software. Firmware boot via USB also allows easy firmware updates as well as the implementation of new features without actual hardware changes or flash reprogramming.

Electron Beam Lithography module (XENOS XP G2) attached to JSM - 6390 SEM

Technical specifications:

  • Writing speed: up to 40 Mpixels/s
  • Resolution: 16 Bit with ultralow noise interface, writing field size of 50000 x 50000 pixels
  • Implemented shapes: dot, single pixel line, rectangular primitives (spiral or meanderfill), trapezoidals, triangles, parallelograms, arrays, 3rd order polynomials, circles, rings or ring segments, import of image files (*.bmp, *.jpg ...), GDS II and AutoCad *.dxf
  • Writing clock: 10 kHz up to 40 MHz in 1 kHz increments
  • Digital full bandwidth field correction: scaling, rotation, orthogonality, shift
  • Mark detection input: analogic input for image detector output (adjustable gain and offset) with 12 Bit sampling, single line scan, selected area or full frame
  • Deflection outputs: Analog outputs up to +/- 10 V (galvanically isolated, adjustable)
  • Blanker output: TTL output with adjustable polarity or optional fibre optics output
  • PC Interface: USB 2.0 compliant for pattern data, video data transmission, system control and firmware boot.

Services: Geometrical micro-and nano-structuration of materials in planar geometry (thin films, multi-layered structures, membranes) for micro-and nanostructures (spin valves, resistors, pillars, planar micro and nanowires, dots, etc.) preparation.