ULTRA HIGH RESOLUTION ELECTRON BEAM LITHOGRAPHY WORKSTATION (eLine Plus)

ULTRA HIGH RESOLUTION ELECTRON BEAM LITHOGRAPHY workstation (eLine Plus) is used for geometric nanostructuring of materials in planar geometry, in-situ morphological and topological analysis of the geometry of nanostructures, electron-beam induced deposition and etching, direct electrical nano-probing, in-situ contacting and wiring of nanostructures for special electrical measurements, etc. The Ultra High Resolution Electron Beam Lithography workstation consists of the following main components/facilities: electron beam column and the optical system with Schottky thermionic field emission filament; high precision X-Y-Z stage and workstation chamber; controlled high speed pattern processor unit with dynamic scan corrections; fixed beam moving stage lithography module; In Lens backscattered electron detector; secondary electron detector, and nano-manipulators; EDS for compositional mapping; GIS (Gas Injection System) deposition system; nanomanipulatorș; integrated vibration isolation system; anti-contaminator; oil-free high vacuum system; system control software with multi-user interface; etc.

Ultra high resolution electron beam lithography workstation (eLine Plus)

Technical specifications:

• Minimum grating periodicity: £ 40 nm
• Minimum feature size: £ 10 nm
• Field stitching size: (I mean I +3s) £ 40 nm
• Overlay accuracy, alignment: (I mean I +3s) £ 40 nm
• High precision X-Y-Z stage.

Services: Geometric nanostructuring of materials in planar geometry (thin films, multi-layered structures, membranes) for micro- and nanostructures (spin valves, resistors, pillars, planar micro and nanowires, dots, etc.) preparation.